英国K.E. Developments,Solid State Backscattered Electron Detector高感度背散射电子侦测器

This state-of-the-art Backscattered detector uses a large silicon diode exclusively manufactured for KED to our own specific design and characterised for electron detection. It is highly compact, with a four quadrant annular construction, which achieves almost perfect symmetry virtually eliminating topographic information and producing a pure compositional signal. However, if topographic information is required, the ability to select quadrants allows this to be done.

Excellent atomic number resolution 0.1Z at Z=30 High bandwidth TV operation, low noise for slow scan Four quadrant detector for composition or topographic studies Choice of detectors for normal, low voltage, UHV, Cathodoluminescence or STEM